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US Patent Issued to NAMI MOS on July 7 for "SiC MOSFETs with saturation current pinching structures" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,450, issued on July 7, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan). "SiC MOSFETs with saturation current pinching structures... Read More


US Patent Issued to International Business Machines on July 7 for "Bottom dielectric isolation for vertically stacked devices" (California, New York Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,451, issued on July 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Bottom dielectric isolation for vertically sta... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Semiconductor device having trenches defining two-dimensionally arranged protrusions and gate pattern sidewalls aligned with trench inner walls" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,452, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Gyeonggi-Do, South Korea). "Semiconductor device having trenches defini... Read More


US Patent Issued to International Business Machines on July 7 for "Frontside ILD optimization for backside power distribution network" (New York Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,453, issued on July 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Frontside ILD optimization for backside power ... Read More


US Patent Issued to SANKEN ELECTRIC on July 7 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,454, issued on July 7, was assigned to SANKEN ELECTRIC Co. LTD. (Niiza, Japan). "Semiconductor device" was invented by Taro Kondo (Niiza, Ja... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on July 7 for "Transistor device having a gate setback from a gate dielectric" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,455, issued on July 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Transistor device having a gate setba... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 7 for "FinFET structure and method for manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,456, issued on July 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "FinFET structure and method for m... Read More


US Patent Issued to UNITED MICROELECTRONICS on July 7 for "Superlattice structure with stress relaxation layers therein" (Taiwanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,457, issued on July 7, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Superlattice structure with stress relaxation... Read More


US Patent Issued to TEXAS INSTRUMENTS on July 7 for "Hybrid component with silicon and wide bandgap semiconductor material in silicon recess" (Pennsylvania, Texas Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,458, issued on July 7, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Hybrid component with silicon and wide bandgap semiconductor materi... Read More


US Patent Issued to SAMSUNG ELECTRONICS on July 7 for "Semiconductor devices and data storage systems including the same" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,459, issued on July 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices and data storage systems... Read More